Patents

1. Hole Doping of Graphene, Chen Wei, XieLanfei, Wang Xiao, Sun Jiatao, Ariando, Andrew Wee T S,

  • European patent No. 11777667.4, ILO Ref: 10133N-PCT/EP
  • Hongkong patent No. 13111216.0, ILO Ref: 10133N-PCT/CN/HK
  • China Patent No. 201180022146.0, ILO Ref: 10133N-PCT/CN
  • Rusia Patent No. 2012149561, ILO Ref: 10133N-PCT/RU
  • South Korea Patent No. 10-2012-7031860, ILO Ref: 10133N-PCT/KR
  • Brazil Patent No. BR 11 2012 028292-1, ILO Ref: 10133N-PCT/BR
  • US Patent No. 13/696,189, ILO Ref: 10133N-PCT/US
  • Singapore Patent ILO Ref: 10133N-PCT/SG
  • Japan Patent 2013-509032, ILO Ref: 10133N-PCT/JP

2. Surface Transfer Hole Doping of Epitaxial Graphene using High Work Function Metal Oxide Thin Film, Chen Wei, XieLanfei, Wang Xiao, Sun Jiatao, Ariando, Andrew Wee T S,PCT/SG2011/000177 (05 May 2011).

3. Synthesis of Graphene by Thickness Selective Laser Ablation of Multilayered Graphite, T. Venkatesan, S. Dhar, A. R. Barman, X. Wang, Ariando, B. Oezyilmaz, US Provisional Patent No. 61/421,265 (09 December 2010).

4. Fabrication of Room-Temperature Ferromagnetic Graphene by Surface Modification with High Work Function Metal Oxides, Chen Wei, XieLanfei, Wang Xiao, Sun Jiatao, Ariando, Andrew Wee T S, US Provisional Patent No. 61/404,975 (12 October 2010).

5. Synthesis of Specific Number of Graphene Layers by Thickness Selective Laser Ablation, T. Venkatesan, S. Dhar, A. R. Barman, X. Wang, Ariando, B. Oezyilmaz, US Provisional Patent No. 61/286,092 (14 December 2009).

6. Room Temperature Ferromagnetic Transparent Semiconductor Thin Film, S. Dhar, T. Venkatesan, A. R. Barman, A. Rusydi, Ariando, H. Yang, US Provisional Patent No. 61/229,311 (29 July 2009).