SYNTHESIS OF MoS₂ NANO STRUCTURED FILM BY NOVEL SINGLE SOURCE PRECURSOR AND STUDY OF ITS SURFACE MODIFICATION

Mr Zhang Heng
Dept of Chemistry, NUS

Abstract
Layered transition metal dichalcogenides such as molybdenum disulfide (MoS₂) are highly versatile with regard to industrial applications. These include high-temperature lubricants, hydrodesulfurization catalysts, and photocathodes, etc. MoS₂ thin films have been fabricated by a variety of methods, such as laser evaporation, radio frequency sputtering, chemical vapor transport, metal-organic chemical vapor deposition.

Single source precursor chemical vapor deposition means that all the elemental components in the thin films are incorporated in the precursor. This method is advantageous due to convenience, ease of control, and it avoids using poisonous H₂S which is widely utilized in metal organic chemical vapor deposition. To date, there has been only one paper which reports the growth of MoS₂ thin film by single source precursor. However, the precursor Mo(S-t-Bu)₄ is extremely air and water sensitive, and this precludes its use in practical application. Moreover, the MoS₂ fabricated from this precursor is amorphous with carbon incorporation from the carbon moieties in the precursors. In this presentation, I will show that a novel single source precursor is successfully synthesized. This precursor is air-stable, easy to synthesize and which can be used for the growth of high-quality, crystalline MoS₂ nanosheet films.

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